Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
Identifieur interne : 000089 ( Russie/Analysis ); précédent : 000088; suivant : 000090Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
Auteurs : RBID : Pascal:10-0372745Descripteurs français
- Pascal (Inist)
- Pompage par laser, Pompage optique, Effet tunnel, Confinement optique, Focalisation optique, Laser semiconducteur, Diode laser, Guide onde optique, Système optique, Méthode optimisation, Epitaxie jet moléculaire, Rendement quantique, Puissance sortie, Point quantique, Hétérostructure, Superréseau, Composé binaire, Cadmium Séléniure, Zinc Séléniure, Composé ternaire, Gallium Nitrure, Indium Nitrure, Laser vert, Puits quantique, Porteur charge, Semiconducteur II-VI, ZnSe, Cd Se, InGaN, Se Zn, Ga In N, CdSe, Laser InGaN, Longueur cavité, 4255P, 4279G, Laser violet.
English descriptors
- KwdEn :
- Binary compounds, Cadmium Selenides, Charge carriers, Gallium Nitrides, Green lasers, Heterostructures, II-VI semiconductors, Indium Nitrides, Laser diodes, Laser pumping, Molecular beam epitaxy, Optical confinement, Optical focusing, Optical pumping, Optical systems, Optical waveguides, Optimization method, Output power, Quantum dots, Quantum wells, Quantum yield, Semiconductor lasers, Superlattices, Ternary compounds, Tunnel effect, Violet lasers, Zinc Selenides.
Abstract
The violet-green laser converter based on a molecular-beam-epitaxy (MBE) grown CdSe quantum dot (QD) laser heterostructure pumped by a commercial InGaN laser diode (LD) emission has been fabricated and studied in detail. The optimized II-VI laser heterostructure consists of asymmetrical ZnSe/ZnSSe superlattice (SL) waveguide and active region comprising five CdSe QD sheets (QDS) placed in the centre of 2-nm-thick ZnSe quantum wells. The new laser structure design provides both a high homogeneity of optical pumping of the CdSe QDS due to tunnelling of charge carriers between the QDS separated by 5-nm-thick ZnSe/ZnSSe/ZnSe barriers and high optical confinement factor. Optimization of both cavity length of the II-VI laser and parameters of optical focusing system to obtain a narrow stripe with the length slightly exceeding the cavity length has been performed. As a result, the maximum achieved quantum efficiency and pulse output power in green have been as high as 8% and 65 mW, respectively.
Links toward previous steps (curation, corpus...)
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Pascal:10-0372745Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode</title><author><name sortKey="Lutsenko, Evgenii V" uniqKey="Lutsenko E">Evgenii V. Lutsenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics of NASB, Independence Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Sorokin, Sergey V" uniqKey="Sorokin S">Sergey V. Sorokin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sedova, Irina V" uniqKey="Sedova I">Irina V. Sedova</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Vainilovich, Aliaksei G" uniqKey="Vainilovich A">Aliaksei G. Vainilovich</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics of NASB, Independence Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Tarasuk, Nikolai P" uniqKey="Tarasuk N">Nikolai P. Tarasuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics of NASB, Independence Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Pavlovskii, Viacheslav N" uniqKey="Pavlovskii V">Viacheslav N. Pavlovskii</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics of NASB, Independence Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Yablonskii, Gennadii P" uniqKey="Yablonskii G">Gennadii P. Yablonskii</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics of NASB, Independence Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>Minsk 220072</wicri:noRegion></affiliation></author><author><name sortKey="Gronin, Sergey V" uniqKey="Gronin S">Sergey V. Gronin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kop Ev, Pyotr S" uniqKey="Kop Ev P">Pyotr S. Kop Ev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Ivanov, Sergey V" uniqKey="Ivanov S">Sergey V. Ivanov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0372745</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0372745 INIST</idno><idno type="RBID">Pascal:10-0372745</idno><idno type="wicri:Area/Main/Corpus">004116</idno><idno type="wicri:Area/Main/Repository">003582</idno><idno type="wicri:Area/Russie/Extraction">000089</idno></publicationStmt><seriesStmt><idno type="ISSN">0370-1972</idno><title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title><title level="j" type="main">Physica status solidi. B. Basic research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Cadmium Selenides</term><term>Charge carriers</term><term>Gallium Nitrides</term><term>Green lasers</term><term>Heterostructures</term><term>II-VI semiconductors</term><term>Indium Nitrides</term><term>Laser diodes</term><term>Laser pumping</term><term>Molecular beam epitaxy</term><term>Optical confinement</term><term>Optical focusing</term><term>Optical pumping</term><term>Optical systems</term><term>Optical waveguides</term><term>Optimization method</term><term>Output power</term><term>Quantum dots</term><term>Quantum wells</term><term>Quantum yield</term><term>Semiconductor lasers</term><term>Superlattices</term><term>Ternary compounds</term><term>Tunnel effect</term><term>Violet lasers</term><term>Zinc Selenides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pompage par laser</term><term>Pompage optique</term><term>Effet tunnel</term><term>Confinement optique</term><term>Focalisation optique</term><term>Laser semiconducteur</term><term>Diode laser</term><term>Guide onde optique</term><term>Système optique</term><term>Méthode optimisation</term><term>Epitaxie jet moléculaire</term><term>Rendement quantique</term><term>Puissance sortie</term><term>Point quantique</term><term>Hétérostructure</term><term>Superréseau</term><term>Composé binaire</term><term>Cadmium Séléniure</term><term>Zinc Séléniure</term><term>Composé ternaire</term><term>Gallium Nitrure</term><term>Indium Nitrure</term><term>Laser vert</term><term>Puits quantique</term><term>Porteur charge</term><term>Semiconducteur II-VI</term><term>ZnSe</term><term>Cd Se</term><term>InGaN</term><term>Se Zn</term><term>Ga In N</term><term>CdSe</term><term>Laser InGaN</term><term>Longueur cavité</term><term>4255P</term><term>4279G</term><term>Laser violet</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The violet-green laser converter based on a molecular-beam-epitaxy (MBE) grown CdSe quantum dot (QD) laser heterostructure pumped by a commercial InGaN laser diode (LD) emission has been fabricated and studied in detail. The optimized II-VI laser heterostructure consists of asymmetrical ZnSe/ZnSSe superlattice (SL) waveguide and active region comprising five CdSe QD sheets (QDS) placed in the centre of 2-nm-thick ZnSe quantum wells. The new laser structure design provides both a high homogeneity of optical pumping of the CdSe QDS due to tunnelling of charge carriers between the QDS separated by 5-nm-thick ZnSe/ZnSSe/ZnSe barriers and high optical confinement factor. Optimization of both cavity length of the II-VI laser and parameters of optical focusing system to obtain a narrow stripe with the length slightly exceeding the cavity length has been performed. As a result, the maximum achieved quantum efficiency and pulse output power in green have been as high as 8% and 65 mW, respectively.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0370-1972</s0></fA01><fA02 i1="01"><s0>PSSBBD</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0></fA03><fA05><s2>247</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode</s1></fA08><fA11 i1="01" i2="1"><s1>LUTSENKO (Evgenii V.)</s1></fA11><fA11 i1="02" i2="1"><s1>SOROKIN (Sergey V.)</s1></fA11><fA11 i1="03" i2="1"><s1>SEDOVA (Irina V.)</s1></fA11><fA11 i1="04" i2="1"><s1>VAINILOVICH (Aliaksei G.)</s1></fA11><fA11 i1="05" i2="1"><s1>TARASUK (Nikolai P.)</s1></fA11><fA11 i1="06" i2="1"><s1>PAVLOVSKII (Viacheslav N.)</s1></fA11><fA11 i1="07" i2="1"><s1>YABLONSKII (Gennadii P.)</s1></fA11><fA11 i1="08" i2="1"><s1>GRONIN (Sergey V.)</s1></fA11><fA11 i1="09" i2="1"><s1>KOP'EV (Pyotr S.)</s1></fA11><fA11 i1="10" i2="1"><s1>IVANOV (Sergey V.)</s1></fA11><fA14 i1="01"><s1>Stepanov Institute of Physics of NASB, Independence Ave. 68</s1><s2>Minsk 220072</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Ioffe Physical Technical Institute of RAS, Polytekhnicheskaya 26</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA20><s1>1557-1560</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183B</s2><s5>354000193087910480</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0372745</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The violet-green laser converter based on a molecular-beam-epitaxy (MBE) grown CdSe quantum dot (QD) laser heterostructure pumped by a commercial InGaN laser diode (LD) emission has been fabricated and studied in detail. The optimized II-VI laser heterostructure consists of asymmetrical ZnSe/ZnSSe superlattice (SL) waveguide and active region comprising five CdSe QD sheets (QDS) placed in the centre of 2-nm-thick ZnSe quantum wells. The new laser structure design provides both a high homogeneity of optical pumping of the CdSe QDS due to tunnelling of charge carriers between the QDS separated by 5-nm-thick ZnSe/ZnSSe/ZnSe barriers and high optical confinement factor. Optimization of both cavity length of the II-VI laser and parameters of optical focusing system to obtain a narrow stripe with the length slightly exceeding the cavity length has been performed. As a result, the maximum achieved quantum efficiency and pulse output power in green have been as high as 8% and 65 mW, respectively.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B79G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Pompage par laser</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Laser pumping</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Pompage optique</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Optical pumping</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Effet tunnel</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Tunnel effect</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Confinement optique</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Optical confinement</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Focalisation optique</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Optical focusing</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>09</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diode laser</s0><s5>11</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Laser diodes</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Guide onde optique</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Optical waveguides</s0><s5>12</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Système optique</s0><s5>13</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Optical systems</s0><s5>13</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Méthode optimisation</s0><s5>23</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Optimization method</s0><s5>23</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Método optimización</s0><s5>23</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>30</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>30</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Rendement quantique</s0><s5>41</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum yield</s0><s5>41</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Puissance sortie</s0><s5>42</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Output power</s0><s5>42</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Potencia salida</s0><s5>42</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Point quantique</s0><s5>47</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Quantum dots</s0><s5>47</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>48</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Heterostructures</s0><s5>48</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Superréseau</s0><s5>49</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Superlattices</s0><s5>49</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Cadmium Séléniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Cadmium Selenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Zinc Séléniure</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Zinc Selenides</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>53</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>53</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Gallium Nitrure</s0><s2>NC</s2><s2>NA</s2><s5>54</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Gallium Nitrides</s0><s2>NC</s2><s2>NA</s2><s5>54</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Indium Nitrure</s0><s2>NC</s2><s2>NA</s2><s5>55</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Indium Nitrides</s0><s2>NC</s2><s2>NA</s2><s5>55</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Laser vert</s0><s5>61</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Green lasers</s0><s5>61</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Puits quantique</s0><s5>62</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Quantum wells</s0><s5>62</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Porteur charge</s0><s5>63</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Charge carriers</s0><s5>63</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0><s5>64</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>II-VI semiconductors</s0><s5>64</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>ZnSe</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Cd Se</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Se Zn</s0><s4>INC</s4><s5>77</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>Ga In N</s0><s4>INC</s4><s5>78</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>CdSe</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>Laser InGaN</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>Longueur cavité</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="35" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="36" i2="3" l="FRE"><s0>4279G</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="37" i2="3" l="FRE"><s0>Laser violet</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="37" i2="3" l="ENG"><s0>Violet lasers</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>242</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:10-0372745
|texte= Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
}}
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